PART |
Description |
Maker |
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRG4BC30FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRG4PC40UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|
IRG4PC50FPBF |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
IRG4PC40FPBF |
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT 绝缘栅BIPOLARTRANSISTOR IGBT的速度
|
International Rectifier, Corp.
|
IRG4PC30UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT 绝缘栅双极晶体管IGBT的速度超快
|
International Rectifier, Corp.
|
IXSH35N135A IXSH35N140A |
1350V high speed IGBT 1400V high speed IGBT
|
IXYS
|
RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|